o top i g o back g i wbfbp-03b plastic-encapsulate transistors TSC114YNND03 transistor description npn digital transistor features 1) built-in bias resistors enable the confi guration of an l q y h u w h u f l u f x l w without connecting external input u h v l v w r u v v h h h t x l y d o h q w f l u f x l w 2) the bias resistors consis t of thin-film resistors with f r p s o h w h l v r o d w l r q to a llow negative biasing of the l q s x w 7 k h \ d o v r k d y h w k h d g y d q w d j h r i almost f r p s o h w h o \ h o l p l q d w l q j s d u d v l w l f h i i h f w v 3) only the on/off conditions need to be set for operation, making device design easy application npn digital transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, not e book pc, etc.) marking: 64 equivalent circuit o 64 i g absolute maximum ratings(ta=25 ) parameter symbol value unit supply voltage v cc 50 v input voltage v in -6 ~ +40 v i o 70 ma output current i c(max.) 100 ma power dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55 ~ +15 electrical characteristics (ta=25 ) parameter s y mbol min typ max unit conditions v i(off) 0.3 v cc =5v ,i o =100 a input voltage v i(on) 1.4 v v o =0.3v ,i o =1ma output voltage v o(on) 0.3 v i o /i i =5ma/0.25ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v ,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 3.7 4.7 5.7 transition frequency f t 250 mhz v o =10v ,i o =-5ma,f=100mhz wbfbp-03b (1.21.20.5) unit: mm 1. in 2. gnd 3. out 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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